XVME-103 单高vmebus兼容板 维持或增强系统的性能

☆型号：XVME-103   单高vmebus兼容板  维持或增强系统的性能

【产品详情】

XVME-103 RAM/ROM内存模块是单高vmebus兼容板。它可以可容纳4mb的RAM, 8mb的内存EPROM, 4mb的Flash或4mb的EEPROM。该模块采用车载电池设计为CMOS RAM提供电源的备用电路设备在电源故障的情况下。

XVME-103有8个32针JEDEC插座逻辑上分为两个独立的存储器银行，每个包含四个站点。每家银行设计为使用相同的存储设备类型和速度，每个银行可以独立配置(通过跳线和开关)。XVME-103上的电源监控电路防止访问内存，并可选地断言如果电源电压低于4.75，则为SYSRESTVDC。这个电路也检查备用电源电源在上电期间，将打开一个前面板“电量不足”LED，并可配置断言如果备份电压不足，则SYSFAIL备份CMOS存储器件。

特性

•8个32针内存插座

•两个独立配置的内存

银行(通过跳线和开关)

•支持读修改写(RMW)周期

•断电记忆保护电路

•CMOS RAM设备的电池备份

•完全用户可配置，允许使用各种存储设备的速度和类型

•支持EPROM, CMOS RAM，闪存，EEPROM

•带前面板的备用电源监视器

电量不足指示器

•前面板银行活动led

【英文介绍】

The XVME-103 RAM/ROM memory module is a single-height, vmebus compatible board. It can hold 4mb of RAM, 8mb of memory EPROM, 4mb of Flash or 4mb of EEPROM. The module uses on-board batteries designed to supply CMOS RAM with a backup circuit device in the event of a power failure.

XVME-103 has eight 32-pin JEDEC sockets logically divided into two separate memory banks, each containing four sites. Each bank is designed to use the same storage device type and speed and each bank can be configured independently  (via jumpers and switches). The power monitoring circuit on XVME-103 prevents access to memory and optionally asserts SYSRESTVDC if the power supply voltage is below 4.75. This circuit also checks the backup power supply during power-on, will turn on a front panel "low power" LED, and can be configured to assert that if the backup voltage is insufficient, then SYSFAIL backup CMOS memory devices.

Features

• Eight 32-pin memory sockets

• Two independently configurable memory

banks (via jumpers and switches)

• Supports read modify write (RMW) cycles

• Power-down memory protection circuitry

• Battery backup for CMOS RAM devices

• Completely user-configurable, allowing a  variety of memory device speeds and types to be used

• Supports EPROM, CMOS RAM, Flash,EEPROM

• Backup power monitor with front panel

battery low indicator

• Front panel bank activity LEDs

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