ABB 5SHY4045L0001 集成栅极换流晶闸管 印刷线路板

【产品详情】

5SHY4045L0001可控硅IGCT板卡5SHX2645L0002当IGCT工作在导通状态时，是一个像晶闸管一样的正反馈开关，其特点是携带电流能力强和通态压降低。在关断状态下，IGCT门--阴极间的pn结提前进入反向偏置，并有效地退出工作，整个器件呈晶体管方式工作，该器件在这两种状态下的等效电路图，所示 IGCT关断时，通过打开一个与阴极串联的开关(通常是MOSFET)，使P基极n发射极反偏，从而迅速阻止阴极注入，将整体的阳极电流强制转化成门极电流(通常在lµs内)，这样便把GTO转化成为一个无接触基区的PNP晶体管，消除了阴极发射极子收缩效应。这样，它的最大关断电流比传统GTO的额定电流高出许多。5SHY4045L0001可控硅IGCT板卡5SHX2645L0002由于IGCT在增益接近1时关断，因此，保护性的吸收电路可以省去。 由于IGCT内部是在基极开路的状态下以晶体管模式对阳极电流进行关断，可以避免出现所谓的“GTO”状态，关断过程中允许更高的阳极电压上升率，而且关断动作非常可靠因此IGCT兼有晶闸管的低通态压降和高阻断电压，以及晶体管稳定的关断特性，是一种比较理想的大功率半导体开关器件。由于门极驱动电路必须在关断过程中迅速转移所有的阳电流。因此，IGCT设计必须采用电感相当低的门极驱动电路。实际中可根据器件要求采用多层布线印刷线路板。

5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50％，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合

ABB 5SHY4045L0001 集成栅极换流晶闸管 印刷线路板

【英文介绍】

5SHY4045L0001 SCR IGCT board 5SHX2645L0002 When IGCT is working in the on-state, it is a positive feedback switch like a thyristor, which is characterized by strong current carrying ability and on-state voltage reduction. In the off state, the pn junction between the IGCT gate and the cathode enters the reverse bias in advance, and effectively exits the work, and the entire device works in a transistor mode. The equivalent circuit diagram of the device in these two states shows that when the IGCT is off, the P base n emitter is reversed by opening a switch in series with the cathode (usually MOSFET). This quickly prevents cathode injection, forcing the overall anode current into a gate current (usually in lµs), thus transforming the GTO into a contactless base PNP transistor, eliminating the cathode emitter contraction effect. As a result, its maximum turn-off current is much higher than the rated current of a conventional GTO. 5SHY4045L0001 SCR IGCT Board 5SHX2645L0002 Because the IGCT is turned off when the gain is close to 1, the protective absorption circuit can be omitted. Because the anode current is turned off in transistor mode in the open base state inside the IGCT, the so-called "GTO" state can be avoided, the turn-off process allows a higher anode voltage rise rate, and the turn-off action is very reliable, so the IGCT has the low on-state voltage drop and high blocking voltage of the thyristor, and the stable turn-off characteristics of the transistor. It is an ideal high-power semiconductor switching device. Because the gate drive circuit must quickly transfer all the positive current during the shutdown process. Therefore, the IGCT design must adopt a gate drive circuit with relatively low inductance. In practice, multilayer wiring printed circuit boards can be used according to device requirements.

5SHY4045L0001 3BHB018162R0001 Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device used in large power electronics sets introduced in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. 5SHY4045L0001 3BHB018162R0001 reduces the dynamic loss by about 50% due to the buffer structure and shallow emitter technology. In addition, such devices also integrate a continuous current diode with good dynamic characteristics on a chip. Thus, the combination of low on-state voltage drop, high blocking voltage and stable transistor switching characteristics is realized in its unique way

ABB 5SHY4045L0001 集成栅极换流晶闸管 印刷线路板

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