ABB 5SHX1445H0002 可控硅 IGCT 具有电流大

【产品详情】

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，

在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。

可控硅是P1N1P2N2四层三端结构元件，共有三个PN结，分析原理时，可以把它看作由一个PNP管和一个NPN管所组成，其等效图解如右图所示。双向可控硅：双向可控硅是一种硅可控整流器件，也称作双向晶闸管。这种器件在电路中能够实现交流电的无触点控制，以小电流控制大电流，具有无火花、动作快、寿命长、可靠性高以及简化电路结构等优点。从外表上看，双向可控硅和普通可控硅很相似，也有三个电极。

IGCT集成门极换流晶闸管(Intergrated Gate Commutated Thyristors)5SHX0660F0002是一种中压变频器开发的用于巨型电力电子成套装置中的新型电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT 5SHX0660F0002是将GTO芯片与反并联二极管和门极驱动电路集成在一起，5SHX0660F0002再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。

ABB 5SHX1445H0002 可控硅 IGCT 具有电流大

【英文介绍】

IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.

The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect.

The thyristor is a P1N1P2N2 four-layer three-terminal structural element with a total of three PN junctions. When analyzing the principle, it can be regarded as composed of a PNP tube and an NPN tube, and its equivalent diagram is shown in the figure on the right. Bidirectional thyristor: Bidirectional thyristor is a silicon controllable rectifier device, also known as bidirectional thyristor. This device can realize the contactless control of alternating current in the circuit, and control the large current with small current. It has the advantages of no spark, fast action, long life, high reliability and simplified circuit structure. From the appearance, the bidirectional thyristor is very similar to the ordinary thyristor, and also has three electrodes.

IGCT integrated Gate Commutated thyristor (Intergrated Gate Commutated) Thyristors 5SHX0660F0002 is a novel power semiconductor switching device (integrated gate commutated thyristors = Gate commutated thyristors + gate units) developed by medium voltage frequency converter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT 5SHX0660F0002 integrates the GTO chip with the anti-parallel diode and gate drive circuit, and 5SHX0660F0002 is connected with its gate driver in the peripheral in a low inductance mode, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and playing the performance of the thyristor in the on-stage. The off phase presents the characteristics of the transistor.

ABB 5SHX1445H0002 可控硅 IGCT 具有电流大

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