ABB 5SHX1060H0003 门极驱动电路集成

【产品详情】

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，

在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。

己用于电力系统电网装置（100MVA）和的中功率工业驱动装置（5MW)IGCT在中压变频器领域内成功的应用了11年的时间（到09年为止)，由于IGCT的高速开关能力无需缓冲电路，因而所需的功率元件数目更少，

运行的可靠性大大增高。IGCT集 IGBT（绝缘门极双极性晶体管）的高速开关特性和GTO（门极关断品闸管）的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。

IGCT集成门极换流晶闸管(Intergrated Gate Commutated Thyristors)5SHX0660F0002是一种中压变频器开发的用于巨型电力电子成套装置中的新型电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT 5SHX0660F0002是将GTO芯片与反并联二极管和门极驱动电路集成在一起，5SHX0660F0002再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。

ABB 5SHX1060H0003 门极驱动电路集成

【英文介绍】

IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.

The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect.

IGCT has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MW)IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less.

The reliability of operation is greatly increased. The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber.

IGCT integrated Gate Commutated thyristor (Intergrated Gate Commutated) Thyristors 5SHX0660F0002 is a novel power semiconductor switching device (integrated gate commutated thyristors = Gate commutated thyristors + gate units) developed by medium voltage frequency converter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT 5SHX0660F0002 integrates the GTO chip with the anti-parallel diode and gate drive circuit, and 5SHX0660F0002 is connected with its gate driver in the peripheral in a low inductance mode, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and playing the performance of the thyristor in the on-stage. The off phase presents the characteristics of the transistor.

ABB 5SHX1060H0003 门极驱动电路集成

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