ABB 5SHY3545L0012  非对称集成栅极换向晶闸管 宽温度范围

【产品详情】

最低状态电压(2V @ 4000A)

针对低频(<100 Hz) 和

宽温度范围

訶靠性

电磁抗扰度

简单的控制界面，带状态反馈

交流或直流电源电压.

联系工厂进行串联

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是，在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是，在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

ABB 5SHY3545L0012  非对称集成栅极换向晶闸管 宽温度范围

【英文介绍】

Minimum state voltage (2V@4000A)

For low frequency (<100 Hz) and

Wide temperature range

trustworthiness

Electromagnetic immunity

Simple control interface with status feedback

Ac or DC supply voltage.

Contact the factory for series

IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, giving play to the performance of the thyristor in the on-stage, and presenting the characteristics of the transistor in the off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage than IGBT using transistor technology, but the widely used standard GTO drive technology causes uneven on-off and off-off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate drive units. As a result, reliability is reduced, the price is higher, and it is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.

IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, giving play to the performance of the thyristor in the on-stage, and presenting the characteristics of the transistor in the off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage than IGBT using transistor technology, but the widely used standard GTO drive technology causes uneven on-off and off-off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate drive units. As a result, reliability is reduced, the price is higher, and it is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.

ABB 5SHY3545L0012  非对称集成栅极换向晶闸管 宽温度范围

【其他型号推荐】