5SHY35L4511 ABB  非对称集成栅极换向晶闸管 高电磁抗扰度

【产品详情】

部件号 5SHY35L4511

描述 非对称集成栅极换向晶闸管

高无缓冲关断额定值• 针对中频 （<1 kHz） 和关断损耗低• 高可靠性• 高电磁抗扰度• 简单的控制界面，带状态反馈• 交流或直流电源电压• 联系工厂进行串联

集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50％，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.

5SHY35L4511 ABB  非对称集成栅极换向晶闸管 高电磁抗扰度

【英文介绍】

Part number 5SHY35L4511

Asymmetric integrated grid commutator thyristors are described

High unbuffered off rating • Low IF frequency (<1 kHz) and off loss • High reliability • High electromagnetic immunity • Simple control interface with status feedback • AC or DC supply voltage • Contact factory in series

Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device used in large power electronics set, which was developed in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.

5SHY35L4511 ABB  非对称集成栅极换向晶闸管 高电磁抗扰度

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