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GV C705 AE01 3BHB045668R0004 半桥驱动器 ABB

GV C705 AE01 3BHB045668R0004 半桥驱动器 ABB 【产品详情】 GV C705 AE01 3BHB045668R0004栅极驱动器分为两类:非隔离式栅极驱动器和隔离式栅极驱动器。大多数用于在高电压下运行的非隔离式栅极驱动器都是半桥驱动器。GV C705 AE01 3BHB045668R0004半桥驱动器旨在驱动以半桥配置堆叠在一起的功率晶体管。它们有两个通道:低侧和高

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产品详情

GV C705 AE01 3BHB045668R0004 半桥驱动器 ABB 


 

GV C707 AE01 3BHB045647R0011.jpg


【产品详情】

 

GV C705 AE01 3BHB045668R0004栅极驱动器分为两类:非隔离式栅极驱动器和隔离式栅极驱动器。大多数用于在高电压下运行的非隔离式栅极驱动器都是半桥驱动器。


GV C705 AE01 3BHB045668R0004半桥驱动器旨在驱动以半桥配置堆叠在一起的功率晶体管。它们有两个通道:低侧和高侧。低侧是一个相当简单的缓冲器,通常与控制输入具有相同的接地点。而高侧则是经过精心设计且以半桥的开关节点为基准,从而允许使用两个N沟道MOSFET或两个IGBT。开关节点应该在高电压总线和电源接地之间快速过渡,从而让我们有机会以具有成本效益的方式利用与为低侧供电时相同的电源通过自举电路为高侧供电。为了传达输出应为高电平还是低电平,必须包含一个高电压电平转换器,该转换器的泄漏电流通常较小,只有几微安或更小。


这种类型的栅极驱动器具有很多局限性。首先,因为它整体都在同一硅片上,因此,无法超出硅的工艺极限。大多数非隔离式栅极驱动器的工作电压都不超过700伏。第二,电平转换器必须承受高电压运行的压力,且必须在高噪声环境中传达输出状态。因此,为了实现充足的噪声滤波,电平转换器通常会添加一些传播延迟。然后,低侧的驱动器又要与高侧驱动器的较长延迟相匹配。第三,用于在高电压下运行的非隔离式栅极驱动器不够灵活。现在存在许多复杂的拓扑,它们要求多个输出能够转换至控制公共端电平以上或以下。


 

 

GV C705 AE01 3BHB045668R0004 半桥驱动器 ABB 

GV C707 AE01 3BHB045647R0011.jpg


英文介绍

 

 

GV C705 AE01 3BHB045668R0004 Gate drivers are divided into two categories: non-isolated gate drivers and isolated gate drivers. Most of the non-isolated gate drivers used to operate at high voltages are half-bridge drivers.


The GV C705 AE01 3BHB045668R0004 Half-bridge driver is designed to drive power transistors stacked together in a half-bridge configuration. They have two channels: the low side and the high side. The low side is a fairly simple buffer that usually has the same ground point as the control input. The high side is carefully designed and benchmarked against a half-bridge switch node, allowing the use of two n-channel MOSFETs or two IGBTs. The switching node should make a quick transition between the high voltage bus and the power ground, giving us the opportunity to power the high side via a bootstrap circuit in a cost-effective manner using the same power supply as when powering the low side. In order to communicate whether the output should be high or low, a high voltage level converter must be included, and the leakage current of the converter is usually small, only a few microamps or less.


This type of gate driver has many limitations. First, because it is all on the same silicon chip, the process limits of silicon cannot be exceeded. Most non-isolated gate drivers operate at no more than 700 volts. Second, the level converter must withstand the pressure of high voltage operation and must communicate the output state in a high noise environment. Therefore, in order to achieve adequate noise filtering, level converters usually add some propagation delay. The drive on the low side is then matched by the longer latency of the drive on the high side. Third, non-isolated gate drivers designed to operate at high voltages are not flexible enough. There are many complex topologies that require multiple outputs to be converted above or below the control common terminal level.


 

GV C705 AE01 3BHB045668R0004 半桥驱动器 ABB 

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