GV C713 A101 3BHB045668R0006 ABB 紧凑型高压栅极驱动器

【产品详情】

GV C713 A101 3BHB045668R0006

PM套件用于14x 91mm光- gv c707 ae01;

紧凑型高压栅极驱动器

一般信息

产品ID  GV C713 A101 3BHB045668R0006

ABB型号

PM套件用于14x 91mm光- gv c707 aeo1

目录描述

PM套件用于14x 91mm光- gv c707 ae01;紧凑型高压栅极驱动器

产品净重

28.56公斤

产品净宽度

技术

技术信息

该材料套件包含闸板单元板和螺钉

额外的信

产品名称

GV C713 A101 3BHB045668R0006紧凑型高压栅极驱动器，设计用于驱动同步降压或半桥配置中的高端和低端N沟道MOSFET。in引脚允许器件用于单PWM输入应用，SD引脚允许控制器在SD引脚为低电平时关闭驱动器输出，而不管IN引脚状态如何。

固定死区时间以及SH引脚上的–1V DC和–19.5V瞬态负电压处理提高了系统在高噪声应用中的稳定性。LM2104采用8引脚SOIC封装，与工业标准引脚排列兼容。低压侧和高压侧供电轨都提供欠压闭锁(UVLO ),用于在通电和断电期间提供保护。

特性

以半桥配置驱动两个N沟道MOSFET

GVDD上的8-V典型欠压锁定

BST上的107-V绝对最大电压

–SH上19.5V绝对最大负瞬态电压处理

0.5-A/0.8-A峰值源/汇电流

475 ns典型固定内部死区时间

内置交叉传导预防

115 ns典型传播延迟

关闭逻辑输入引脚SD

单输入引脚IN

GV C713 A101 3BHB045668R0006 ABB 紧凑型高压栅极驱动器

【英文介绍】

GV C713 A101 3BHB045668R0006

PM Kit for 14x 91mm optical - gv c707 ae01;

Single channel H-bridge gate driver

General information

Product ID GV C713 A101 3BHB045668R0006

ABB model

PM kit for 14x 91mm optical - gv c707 aeo1

Directory description

PM Kit for 14x 91mm optical - gv c707 ae01; Single channel H-bridge gate driver

Net product weight

28.56 kg

Net width of product

technology

Technical information

The material kit consists of ram unit plates and screws

Extra letter

Product name

GV C713 A101 3BHB045668R0006 Compact high voltage gate driver designed to drive high - and low-end N-channel MOSFETs in synchronous buck or half-bridge configurations. The in pin allows the device to be used for single PWM input applications, and the SD pin allows the controller to turn off the driver output when the SD pin is low power, regardless of the IN pin status.

Fixed dead time and transient negative voltage handling of -1V DC and -19.5V on the SH pins improve system stability in high noise applications. The LM2104 comes in an 8-pin SOIC package that is compatible with industry standard pin arrangements. Both the low and high voltage side supply rails provide undervoltage latching (UVLO) to provide protection during power and power outages.

peculiarity

Drive two n-channel MOSFETs in a half-bridge configuration

Typical 8-V undervoltage lock on GVDD

Absolute maximum voltage of 107-V on BST

- SH on 19.5V absolute maximum negative transient voltage processing

0.5-A/0.8-A Peak source/sink current

475 ns Typical fixed internal dead zone time

Built-in cross-conduction prevention

115 ns typical propagation delay

Close logical input pin SD

Single input pin IN

GV C713 A101 3BHB045668R0006 ABB 紧凑型高压栅极驱动器

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