GV C703 AE01 3BHB045647R0004 ABB 栅极驱动板套件

【产品详情】

GV C703 AE01 3BHB045647R0004

PM套件用于14x 91mm光- gv c707 ae01;

栅极驱动板套件

一般信息

产品ID

GV C703 AE01 3BHB045647R0004

ABB型号

PM套件用于14x 91mm光- gv c707 aeo1

目录描述

PM套件用于14x 91mm光- gv c707 ae01;栅极驱动板套件

产品净重

28.56公斤

产品净宽度

技术

技术信息

该材料套件包含闸板单元板和螺钉

额外的信息

产品名称

栅极驱动板套件

栅极驱动板的优缺点如下：

优点。驱动功率小、动态范围大、安全工作区域宽、开关速度快、高频性能好、输入阻抗高、噪声小等。

缺点。容易造成器件甚至系统的失效、不适合集成到其配对系统控制器中、封装间隔等要求较高、可能会影响芯片上的所有电路等。

GBT/功率MOSFET的结构使得栅极形成一个非线性电容。给栅极电容充电会使功率器件导通，并允许电流在其漏极和源极引脚之间流动，而放电则会使器件关断，漏极和源极引脚上就可以阻断大电压。当栅极电容充电且器件刚好可以导通时的最小电压就是阈值电压(VTH)。为将IGBT/功率MOSFET用作开关，应在栅极和源极/发射极引脚之间施加一个充分大于VTH的电压。

GV C703 AE01 3BHB045647R0004 ABB 栅极驱动板套件

【英文介绍】

GV C703 AE01 3BHB045647R0004

PM Kit for 14x 91mm optical - gv c707 ae01;

Grid drive board kit

General information

Product ID

GV C703 AE01 3BHB045647R0004

ABB model

PM kit for 14x 91mm optical - gv c707 aeo1

Directory description

PM Kit for 14x 91mm optical - gv c707 ae01; Grid drive board kit

Net product weight

28.56 kg

Net width of product

technology

Technical information

The material kit consists of ram unit plates and screws

Additional information

Product name

Grid drive board kit

The advantages and disadvantages of the grid drive plate are as follows:

Advantages. Small driving power, large dynamic range, wide safe working area, fast switching speed, good high-frequency performance, high input impedance, low noise and so on.

Disadvantages. It is easy to cause the failure of the device or even the system, is not suitable for integration into its paired system controller, has high requirements such as packaging interval, and may affect all circuits on the chip.

The structure of the GBT/ power MOSFET allows the gate to form a nonlinear capacitor. Charging the gate capacitor causes the power device to be on and allows current to flow between its drain and source pins, while discharging causes the device to be turned off and large voltages can be blocked at the drain and source pins. The minimum voltage when the gate capacitor is charged and the device is just ready to be switched on is the threshold voltage (VTH). To use an IGBT/ power MOSFET as a switch, a voltage sufficiently greater than VTH should be applied between the gate and source/emitter pins.

GV C703 AE01 3BHB045647R0004 ABB 栅极驱动板套件

【其他型号推荐】