UNS0874A 非对称晶闸管IGCT ABB 集成栅极换向晶闸管
【产品详情】
5SHY35L4520
基本信息
产品编号:5SHY35L4520
ABB型号名称:4500V 4000A
目录说明:非对称晶闸管IGCT
附加信息
ABB型号名称:4500V 4000A
原产国:瑞士 (瑞士)
海关关税编号:8541300000
框架尺寸:Spare_Parts
总体积:3.114 分立方米
毛重:2.9 千克
发票说明:非对称晶闸管IGCT
定制:不
介质描述:非对称集成栅极换向晶闸管
最小起订量:1 件
订单倍数:1 件
产品名称:控制系统附件
产品净深度/长度:439 毫米
产品净高:41 毫米
产品净重:2.9 千克
产品净宽:173 毫米
产品类型:Control_System_Accessory
仅报价:不
更换的产品 ID(旧):5SHY35L4510
销售计量单位:块
库存地点(仓库):瑞典 马尔默
技术信息:非对称集成栅极换向晶闸管
安装力 40kN
高无缓冲关断额定值
针对中频
进行了优化 高电磁抗扰度
带有状态反馈
的简单控制接流或直流电源电压
报废电子电气设备类别:产品不在 WEEE 范围内
5SHY35L4520集成栅极换向晶闸管(IGCT)是一种新型的电力半导体器件,它是基于GTO(门极可关断)结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的晶闸管。
IGCT是1996年问世的一种用于巨型电力电子成套装置中的新型电力半导体器件,具有晶闸管的通态特性及晶体管的开关特性,主要应用于电力电子成套装置中,如高压直流输电、静止无功补偿装置、智能电网、高低压电动机软启动装置等,IGCT器件耐压等级最高可达8000V,电流等级最大可达4000A。
UNS0874A 非对称晶闸管IGCT ABB 集成栅极换向晶闸管
【英文介绍】
5SHY35L4520
Basic information
Product Number: 5SHY35L4520
ABB model name: 4500V 4000A
Catalog Description: Asymmetric thyristor IGCT
Additional information
ABB model name: 4500V 4000A
Country of Origin: Switzerland (Switzerland)
Customs Tariff Number: 8541300000
Frame size: Spare_Parts
Total volume: 3.114 min cubic meters
Gross weight: 2.9 kg
Invoice description: Asymmetric thyristor IGCT
Customization: No
Medium description: asymmetric integrated gate commutator thyristor
Minimum order quantity: 1 piece
Order multiple: 1 piece
Product name: Control system accessories
Product net depth/length: 439 mm
Product height: 41 mm
Net weight: 2.9 kg
Product width: 173 mm
Product type: Control_System_Accessory
Offer only: No
Replacement product ID (old) : 5SHY35L4510
Sales unit: block
Stock location (warehouse) : Malmo, Sweden
Technical information: Asymmetric integrated gate commutator thyristor
Installation force 40kN
High unbuffered off rating
For intermediate frequency
Optimized for high electromagnetic immunity
With state feedback
Simple control of the connection or DC supply voltage
Waste electrical and electronic equipment category: Products are not included in WEEE
5SHY35L4520 integrated gate commutator thyristor (IGCT) is a new type of power semiconductor device, which is based on GTO (gate turn-off) structure, adopts integrated gate structure for hard gate drive, adopts buffer layer structure and transparent anode emitter technology.
IGCT is a new type of power semiconductor device for giant power electronic complete sets of devices, which has the on-state characteristics of thyristor and the switching characteristics of transistor, and is mainly used in power electronic complete sets of devices, such as HVDC transmission, static reactive power compensation device, smart grid, high and low voltage motor soft start device, etc. The IGCT device can withstand voltage up to 8000V and current up to 4000A.
UNS0874A 非对称晶闸管IGCT ABB 集成栅极换向晶闸管
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