5SHY3545L0009 功率半导体器件 ABB 

【产品详情】

在目前的中电压大功率应用领域﹐占主导地位的功率半导体器件主要有晶闸管、门极可关断晶闸管(GTO)、绝缘栅双极型晶体管(IGBT)等,这些传统的功率器件在实用方面﹐都存在一些缺陷。GTO在一个硅片上集成了数千个分离开关单元。在中电压下，GTO呈现很小的通态损耗和合理的关断损耗。然而，由于开关的不均匀，GTO需外加缓冲电路来维持工作。这些缓冲电路占用了整个设备的大部分体积，是引起设计复杂、成本高、损耗大的主要原因。

相反，IGBT开关均匀，不需要缓冲电路，但通态损耗较大，而且用于中电压电路时，必须将低压IGBT串联使用，这样大大增加了系统的复杂性和损耗，同时还降低了系统的可靠性。

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，

在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。

己用于电力系统电网装置（100MVA）和的中功率工业驱动装置（5MW)IGCT在中压变频器领域内成功的应用了11年的时间（到09年为止)，由于IGCT的高速开关能力无需缓冲电路，因而所需的功率元件数目更少，

运行的可靠性大大增高。IGCT集 IGBT（绝缘门极双极性晶体管）的高速开关特性和GTO（门极关断品闸管）的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。

在ACS6000的有缘整流单元的相模块里，每相模块由IGCT 和二极管、钳位电容组成，由独立的门极供电单元GUSP为其提供能源。

5SHY3545L0009 功率半导体器件 ABB 

【英文介绍】

At present, the dominant power semiconductor devices in the field of medium voltage and high power applications are mainly thyristors, gate turn-off thyristors (GTO), insulated gate bipolar transistors (IGBTs), etc. These traditional power devices have some defects in practical aspects. The GTO consists of thousands of separate switch units on a single silicon chip. At medium voltage, GTO presents small on-state loss and reasonable off loss. However, due to the uneven switching, the GTO needs an additional buffer circuit to maintain operation. These buffer circuits occupy most of the volume of the whole equipment, which is the main reason for complex design, high cost and large loss.

On the contrary, the IGBT switch is uniform and does not require a buffer circuit, but the on-state loss is large, and when used in a medium-voltage circuit, the low-voltage IGBT must be used in series, which greatly increases the complexity and loss of the system, and also reduces the reliability of the system.

IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.

The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect.

IGCT has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MW)IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less.

The reliability of operation is greatly increased. The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber.

In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

5SHY3545L0009 功率半导体器件 ABB 

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