3AXD50000007342 IGBT模块 ABB  IGBT 套件

【产品详情】

ABB 3AXD50000007342 IGBT模块

最大集电极-发射极电压：1200 V

最大集电极电流：600 A

最大功耗：3900 W

最大结温：150°C 隔离电压：2500 VAC

重量 1.4 千克

类型 IGBT 套件

生产于 芬兰

身份证 3AXD50000007342

关税代码 85359000

名字 BGAD-21C / 500 A-1700 V-EP+ SP

项目名称 IGBT 套件

不同电压和电流等级的 IGBT 分立器件、压接式器件、功率模块以及组件解决方案。

我们的 IGBT 产品系列包括多款不同器件。这些产品广泛应用于汽车、牵引、能源传输、工业和消费系统领域。我们的解决方案在正向和阻断状态下功耗非常低，仅需低驱动功率便可发挥高效率。这些 IGBT 产品可承受高达 6.5 kV 的电压，并可在 2 kHz 至 50 kHz 的开关频率下工作。

借助广泛的技术组合优势，面向工业和功率控制应用的 IGBT ,具有出色的电流承载能力和更高的脉冲负载能力，功耗极低。

IGBT系列概述

IGBT裸片是硅基的绝缘栅双极晶体管芯片。裸片和晶圆级别的芯片可帮助模块制造商提高产品集成度和功率密度，并有效节约电路板空间。另外，英飞凌还提供完善的独立塑封IGBT系列：IGBT单管。该系列芯片包括单片IGBT，以及和续流二极管集成封装的产品，广泛应用于通用逆变器、太阳能逆变器、不间断电源（UPS）、感应加热设备、大型家电、焊接以及开关电源（SMPS）等领域。单管IGBT电流密度高且功耗低，能够提高能效、降低散热需求，从而有效降低整体系统成本。

功率模块是比分立式IGBT规模稍大的产品类型，用于构造电力电子设备的基本单元。这类模块通常由IGBT和二极管组成，可有多种拓扑结构。而即用型组件模块则专用于满足大功率应用的需求。这些组件常被称作系统，根据具体应用领域采用IGBT功率模块或单管进行构造。从具有整流器、制动斩波器和逆变器的一体化功率集成模块，到最大功率的组件，英飞凌的产品覆盖了几百瓦到几兆瓦的功率范围。这些产品高度可靠，性能、效率和使用寿命均很出色，有利于通用驱动器、伺服单元和可再生能源应用（如太阳能逆变器和风力发电应用）的设计。

3AXD50000007342 IGBT模块 ABB  IGBT 套件

【英文介绍】

ABB 3AXD50000007342 IGBT module

Maximum collector-emitter voltage: 1200 V

Maximum collector current: 600 A

Maximum power consumption: 3900 W

Maximum junction temperature: 150°C Isolation voltage: 2500 VAC

Weight 1.4kg

Type IGBT package

Produced in Finland

Id card 3AXD50000007342

Tariff code 85359000

Name BGAD-21C / 500 A-1700 V-EP+ SP

Project name IGBT Suite

Discrete IGBT devices, crimp devices, power modules and component solutions for different voltage and current levels.

Our IGBT product range includes a wide range of devices. These products are widely used in automotive, traction, energy transmission, industrial and consumer systems. Our solutions have very low power consumption in both forward and block states and require only low drive power for high efficiency. These IGBT products can withstand voltages up to 6.5 kV and operate at switching frequencies from 2 kHz to 50 kHz.

With a broad portfolio of technologies, IGBTs for industrial and power control applications offer excellent current carrying capacity and higher pulse load capacity with extremely low power consumption.

Overview of the IGBT series

IGBT bare chip is a silicon based insulated gate bipolar transistor chip. Bare - and wafer-level chips can help module manufacturers improve product integration and power density, and effectively save board space. In addition, Infineon offers a complete line of independent plastic sealed IGBTs: IGBT single tubes. This series of chips includes monolithic IGBTs, as well as products integrated with continuous current diodes, which are widely used in general purpose inverters, solar inverters, uninterruptible power supplies (UPS), induction heating equipment, large home appliances, welding, and switching power supplies (SMPS). Single-tube IGBTs have high current density and low power consumption, which improves energy efficiency and reduces heat dissipation requirements, thereby effectively reducing overall system costs.

The power module is a slightly larger product type than the vertical IGBT and is used to construct the basic unit of power electronic equipment. Such modules are usually composed of IGBTs and diodes and can have a variety of topologies. Ready-to-use component modules are designed to meet the needs of high-power applications. These components, often referred to as systems, are constructed using IGBT power modules or single tubes, depending on the specific application. From integrated power modules with rectifiers, brake choppers and inverters, to maximum power components, Infineon's products cover the power range from a few hundred watts to several megawatts. These products are highly reliable with excellent performance, efficiency and lifetime, facilitating the design of general-purpose drives, servo units and renewable energy applications such as solar inverters and wind power applications.

3AXD50000007342 IGBT模块 ABB  IGBT 套件

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