ABB DSSR122 4899001-NK 配电控制系统
ABB DSSR122 4899001-NK 配电控制系统
DSSR122 图1中描绘了设备原理,仅考虑了门单元的高要求关断电路。器件的导通原则上相当于晶闸管或GTO的导通。由于分布式栅极结构(见图2 ),显著更高的导通脉冲可以容易地施加到功率半导体,从而导致晶闸管的快速锁存,并由此获得高dI/dt能力。在导通状态下,IGCT作为一个锁存晶闸管工作 可靠性鉴定 DSSR122 对于主要故障模式的可靠性评估,讨论了设备鉴定的结果,包括加速试验、连续生产的质量监控结果、现场故障的结果以及苛刻应用中长期运行后的设备分析结果。与GTOs等前几代器件相比,我们特别关注该器件推出时的新设计特性。 结论 20多年前,IGCT作为新型功率半导体器件推出,DSSR122 专门用于要求高可靠性的高功率电子应用。由于对门电路(封装、与门单元的接口和门单元)的新的苛刻要求,特别是对门电路路径的可靠性的关注增加了。经过20年的IGCT应用,观察到的故障率显示了最先进的性能。进入后的设备分析
ABB DSSR122 4899001-NK 配电控制系统
DSSR122 The principle of the device is depicted in Figure 1, and only the high-demand turn-off circuit of the gate unit is considered. In principle, the conduction of the device is equivalent to the conduction of thyristor or GTO. Due to the distributed gate structure (see fig. 2), a significantly higher turn-on pulse can be easily applied to the power semiconductor, resulting in a rapid latch of the thyristor, and thus obtaining a high dI/dt capability. In the on state, IGCT is used as a reliability appraisal of latching thyristor. DSSR122 evaluates the reliability of main failure modes, and discusses the results of equipment appraisal, including accelerated test, quality monitoring results of continuous production, field failure results and equipment analysis results after long-term operation in harsh applications. Compared with previous generations of devices such as GTOs, we pay special attention to the new design characteristics of this device when it is introduced. Conclusion IGCT was introduced as a new type of power semiconductor device more than 20 years ago, and DSSR122 was specially used for high-power electronic applications requiring high reliability. Due to the new strict requirements for gate circuits (packaging, interface of AND gate unit and gate unit), especially the concern about the reliability of gate circuit path has increased. After 20 years of IGCT application, the observed failure rate shows the most advanced performance. Equipment analysis after entry
ABB DSSR122 4899001-NK 配电控制系统