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ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块

ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块品牌ABB产品特性工控产品是否进口否产地瑞士可售卖地全国型号3BHE009681R0101 GVC750BE101 3BHB01308ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备

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ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块

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3BHE009681R0101 GVC750BE101 3BHB01308

ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块

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5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件,具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术,因而使动态损耗降低了约50%,另外,此类器件还在一个芯片上集成了具有良好动态特性的续流二极管,从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.IGCT触发功率小,可以把触发及状态监视电路和IGCT管芯做成一个整体,5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101通过两根光纤输入触发信号、输出工作状态信号。IGCT将 GTO技术与现代功率晶体管IGBT的优点集于一身,利用大功率关断器件可简单可靠地串联这一关键技术,使得IGCT在中高压领域以及功率在 0.5MVA~100MVA的大功率应用领域尚无真正的对手。IGCT损耗低、开关快速等这些优点保证了它能可靠、高效率地用于300 kVA~10MVA变流器,而不需要串联或并联。在串联时,逆变器功率可扩展到100MVA。虽然高功率的IGBT模块具有一些优良的特性,5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101如能实现di/dt和dv/dt 的有源控制、有源箝位、易于实现短路电流保护和有源保护等。但因存在着导通高损耗、损坏后造成开路以及无长期可靠运行数据等缺点,限制了高功率IGBT模块在高功率低频变流器中的实际应用。因此IGCT将成为高功率高电压变频器的首选功率器件。

ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块

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5Shy3545L00093BHB013085R0013BHE009681R0101GVC 750BE101 Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device used in giant power electronics complete sets, which was invented in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, which uses integrated gate structure for hard driving, buffer layer structure and anode transparent emitter technology, and has the on-state characteristics of thyristor and the switching characteristics of transistor. Because of the buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%. In addition, this kind of device also integrates a free-wheeling diode with good dynamic characteristics on one chip, thus realizing the organic combination of low on-state voltage drop of thyristor, high blocking voltage and stable switching characteristics of transistor in its unique way. IGCT trigger power is small, and the trigger and state monitoring circuit and IGCT die can be integrated. 5Shy3545L0009 3BHB013085R0013BHE009681R0101GVC 750BE101 inputs trigger signal and outputs working status signal through two optical fibers. IGCT combines the advantages of GTO technology and modern power transistor IGBT, and makes use of the key technology that high-power turn-off devices can be connected in series simply and reliably, which makes IGCT have no real rivals in the field of medium and high voltage and high-power applications with power of 0.5 MVA ~ 100 MVA. The advantages of IGCT, such as low loss and fast switching, ensure that it can be used in 300 kVA ~ 10 MVA converters reliably and efficiently without series or parallel connection. When connected in series, the inverter power can be extended to 100MVA. Although high-power IGBT module has some excellent characteristics, 5Shy3545L0093BHB013085R0013BHE09681R0101GVC 750BE101 can realize active control, active clamping, short-circuit current protection and active protection of di/dt and dv/dt. However, the practical application of high-power IGBT module in high-power low-frequency converter is limited because of its shortcomings such as high conduction loss, open circuit caused by damage and no long-term reliable operation data. Therefore, IGCT will become the preferred power device for high-power and high-voltage frequency converters.

ABB 5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 工控备件模块


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