ABB 5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 应用模块

5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 ABB 

5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 ABB 

5SHX1445H0001 3BHL000391P0101为了实现如此高的负载能力，对HPT-IGCT进行了一系列改进。为了实现如此高的负载能力，HPT-IGCT正在进行一系列改进，目标是将工作温度从125 °C提高到140 °C。在硅中，HPT-IGCT中引入的波纹状p基掺杂剖面已被优化，以便在从0°C到140°C的整个温度范围内充分利用SOA。在硅中，HPT-IGCT中引入的波纹状p基掺杂曲线已经过优化，可以在0 °C到140 °C的整个温度范围内充分利用SOA。此外，内部界面如此外，还改进了晶圆上的金属化等内部接口，以实现更高的热机械性。这些措施允许在140 °C的间歇运行条件下，器件的温度偏差更大。这些改进的验证工作已经开始这些改进的验证工作已经开始，结果看起来很有希望。反向闭锁IGCT某些交流应用和电流源逆变器（CSI）需要一个对称阻断的开关器件。虽然这可以通过使用与快速二极管串联的非对称IGCT来实现。但解决方案是对称IGCT。由于对称IGCT的性能要求和某些工作模式与快速二极管串联的非对称IGCT有很大不同，因此的解决方案是对称IGCT。由于对称IGCT的性能要求和某些工作模式与非对称IGCT有很大不同，因此在实现对称IGCT时需要进行大量的学习。由于对称IGCT的性能要求和某些工作模式与非对称IGCT有很大的不同，因此要实现对称IGCT需要大量的学习。ABB接受了这一挑战，实现了首批对称IGCT，并正在进行广的测试。正在进行广的测试。新产品系列的额定电压为6500V，非常适合表2所示的2300V线电压。

5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 ABB 通讯模块

5SHX1445H00013BHL00391P0101 In order to achieve such a high load capacity, a series of improvements have been made to HPT-IGCT. In order to achieve such a high load capacity, HPT-IGCT is undergoing a series of improvements, with the goal of increasing the working temperature from 125 °C to 140 C. In silicon, the corrugated P-based doping profile introduced in HPT-IGCT has been optimized to make full use of SOA in the whole temperature range from 0 C to 140 C. In silicon, the corrugated P-based doping curve introduced in HPT-IGCT has been optimized, and SOA can be fully utilized in the whole temperature range from 0 °C to 140 C. In addition, the internal interface is improved, such as metallization on the wafer, to achieve higher thermomechanical properties. These measures allow the temperature deviation of the device to be larger under the intermittent operation condition of 140 C. The verification of these improvements has begun, and the results look promising. Some AC applications of reverse blocking IGCT and current source inverter (CSI) need a symmetrical blocking switching device. Although this can be achieved by using an asymmetric IGCT in series with a fast diode. But the solution is symmetric IGCT. Because the performance requirements of symmetric IGCT are very different from those of asymmetric IGCT with fast diodes in series, the solution is symmetric IGCT. Because the performance requirements and some working modes of symmetric IGCT are very different from those of asymmetric IGCT, a lot of learning is needed to realize symmetric IGCT. Because the performance requirements and some working modes of symmetric IGCT are very different from those of asymmetric IGCT, it needs a lot of learning to realize symmetric IGCT. ABB accepted this challenge, realized the first batch of symmetrical IGCT, and is conducting extensive testing. Extensive testing is under way. The rated voltage of the new product series is 6500V, which is very suitable for the line voltage of 2300V shown in Table 2.

5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 ABB 通讯模块

ABB CI522A 3BSE018283R1 

ABB  CI546 3BSE012545R1 

ABB SB510 3BSE000860R1 

ABB TC520 3BSE001449R1 

ABB SR511 3BSE000863R1 

ABB SC520 3BSE003816R1 

ABB SC510 3BSE003832R1 

ABB RE522 3BSE000743R1 

ABB DSRF197 3BSE019297R1 

ABB DSAO120A 3BSE018293R1

ABB DSDP170 57160001-ADF

ABB TC512V1 3BSE018059R1

ABB DSDO115A 3BSE018298R1

ABB DSAI130D 3BSE003127R1

ABB DSDI110AV1 3BSE018295R1

ABB PM904F 3BDH001002R0001

ABB TP854 3BSE025349R1

ABB PM865K01 3BSE031151R1

ABB TB850 3BSC950193R1

ABB SM811K01 32SE018173R1