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S-073N 3BHB009884R0021
S-073N 3BHB009884R0021

S-073N 3BHB009884R0021 高压变频器相模块

型号:S-073N3BHB009884R0021高压变频器相模块【产品详情】ACS2000高压变频器如何更改相模块。可以直接挂网连接,你也可通过单独的双绕组变压

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产品详情

型号:S-073N 3BHB009884R0021 高压变频器相模块

 

 

ABB-KUC711AE101-3BHB004661R0101.jpg


【产品详情】

 

 

 

ACS2000高压变频器如何更改相模块。可以直接挂网连接,你也可通过单独的双绕组变压器或集成变压器连接到电网而且适于直接电网连接或带输入隔离变压器应用


位二极管01、02,吸收二极管03、04,吸收电容(:1、02。


[0031]其中,由功率组件构成的三电平电路如图1所示,四个IGCT T1、T2、T3、T4依次出联连接干吸收二极管D3的阳极和吸收二极管D4的阳极之间,吸收二极管D3的阳极依次通过吸收电容CI、C2与吸收二极管D4的阴极电性相连,钳位二极管DI的阴极电


性连接于IGCT T1,T2之间的节点,销位二极管DI的阳极电性连接干吸收电容C1、C2


之间的节点,钳位二极管D2的阳极电性连接于IGCT T3、T4之间的节点,钳位二极管 D2的阴极电性连接于吸收电容CI、C2之间的节点。优选地,在本实施例中,IGCTT1、T2、T3、T4为逆导型IGCT。


0032]进一步地,三电平电路还可以包括外围部件,例如电感L1、L2,电阻R1、R2.其中,电感LI的一端与IGCT TI电性相连,另一端与电阻RI的一端相连,电阻RI的另一端连接干吸收二极管D3和吸收电容CI之间的节点,电感L2的一端与IGCT T4电性相连,另一端与电阳R2的一端相连,电阴R2的另一端连接干吸收二极管D4和吸收电容 C2之间的节点。

型号:S-073N 3BHB009884R0021 高压变频器相模块

 

ABB-KUC711AE101-3BHB004661R0101.jpg


英文介绍

 

 

ACS2000 High Voltage inverter how to change the phase module. It can be connected directly to the grid, you can also connect to the grid via a separate double-winding transformer or integrated transformer and is suitable for direct grid connection or with input isolation transformer applications


Bit diodes 01, 02, absorption diodes 03, 04, absorption capacitance (:1, 02.


[0031] Among them, the three-level circuit composed of power components is shown in Figure 1. Four IGCT T1, T2, T3 and T4 are successively connected between the anode of the dry absorption diode D3 and the anode of the absorption diode D4. The anode of the absorption diode D3 is successively connected to the cathode of the absorption diode D4 through the absorption capacitor CI and C2. Clamping diode DI cathode electricity


It is connected to the nodes between IGCT T1 and T2, and the anode of the pin position diode DI is electrically connected to the dry absorbing capacitors C1 and C2


The anode electrical properties of the clamping diode D2 are connected to the nodes between IGCT T3 and T4, and the cathode electrical properties of the clamping diode D2 are connected to the nodes between the absorbing capacitors CI and C2. Preferably, in this embodiment, IGCTT1, T2, T3, and T4 are reverse-guided IGCTs.


Further, a three-level circuit may also include peripheral components, such as inductors L1, L2, and resistors R1, R2. One end of the inductor LI is electrically connected to IGCT TI, the other end is electrically connected to the end of the resistance RI, the other end of the resistance RI is connected to the node between the dry absorption diode D3 and the absorption capacitance CI, the end of the inductor L2 is electrically connected to the IGCT T4, and the other end is electrically connected to the end of the positive R2. The other end of the negative R2 is connected to the node between the dry absorption diode D4 and the absorption capacitor C2.


 

型号:S-073N 3BHB009884R0021 高压变频器相模块

 

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