ABB 5SHY5045L0020 AC10272001R0101 5SXE08-0167 ACS6000IGCT相模块

【产品详情】

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167集IGBT(绝缘门极双极性晶体管)的高速开关特性和GTO(门极关断晶闸管)的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。在ACS6000的有源整流单元的相模块里，每相模块由IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 和续流二极管、钳位电容、阻尼电阻组成，由独立的门极供电单元GUSP为其提供能源。

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-016具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且成本低，成品率高，有很好的应用前景。 已用于电力系统电网装置(100MVA)和的中功率工业驱动装置(5MW)IGCT在中压变频器领域内成功的应用了11年的时间(到09年为止)，由于IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-016的高速开关能力无需缓冲电路，因而所需的功率元件数目更少，运行的可靠性大大增高。

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 集成门极换流晶闸管是一种中压变频器开发的用于巨型电力电子成套装置中的新型电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。

ABB 5SHY5045L0020 AC10272001R0101 5SXE08-0167 ACS6000IGCT相模块

【英文介绍】

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 combines the high-speed switching characteristics of IGBT(insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of GTO(gate off thyristor). The general trigger signal is transmitted to the IGCT unit via optical fiber. In the phase module of the ACS6000 active rectifier unit, each phase module is composed of IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 and continuous current diode, clamp capacitor and damping resistor, and is provided with energy by an independent gate power supply unit GUSP.

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-016 has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-loss, etc., and low cost, high yield, and has a good application prospect. IGCT has been used in power systems for power grid devices (100MVA) and medium power industrial drives (5MW) for 11 years in the field of medium voltage frequency converters (up to 2009). Because the high-speed switching capability of IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-016 does not require a buffer circuit, the number of power components required is less, and the reliability of operation is greatly increased.

IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 Integrated gate commutated thyristor is a new type of power semiconductor switching device (integrated gate commutated thyristor = gate commutated thyristor + gate unit) developed by medium voltage frequency converter for large power electronics sets. IGCT 5SHY5045L0020 AC10272001R0101 5SXE08-0167 has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets of devices.

ABB 5SHY5045L0020 AC10272001R0101 5SXE08-0167 ACS6000IGCT相模块

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