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ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 高压柜IGCT模块

5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT是一种集成电路,它可以控制电机的转速和转矩。它可以提供高效的控制,并且可以提供更高的精度和可靠性。 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT是一种复合器件,它由一个集成电路(IC)和一个可控硅(IGBT)组成,可以提供高效的控制,并且可以提供更高的精度和可

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ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 高压柜IGCT模块

5SHY3545L0020-3.jpg

 

【产品详情】

 

5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT是一种集成电路,它可以控制电机的转速和转矩。它可以提供高效的控制,并且可以提供更高的精度和可靠性。 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT是一种复合器件,它由一个集成电路(IC)和一个可控硅(IGBT)组成,可以提供高效的控制,并且可以提供更高的精度和可靠性。

IGCT和IGBT之间的主要区别在于IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 可以提供更高的效率和更低的损耗,而IGBT可以提供更高的功率密度和更低的噪声。此外,IGCT可以提供更高的精度和可靠性,而IGBT可以提供更低的成本。

IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点,而且造成本低,成品率高,有很好的应用前景。

IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 是电流脉冲驱动,驱动功率比较大,但其门极驱动电路集成在IGCT内,对外只有门极驱动供电接口和用于传输触发信号和反馈状态的光纤,驱动体积小且简易。IGCT是晶闸管的复合管,可直接串联,因此不必过多考虑均压措施。而IGBT在串联使用时应考虑均压措施。IGCT导通和关断损耗都很低,如果不计驱动功率,同电压等级的IGCT损耗要比IGBT更低。对于IGCT,4.5kV/3kA是较常用的规格,其容量和电压等级要远比IGBT大得多,更适合应用在大功率FACTS装置及大功率传动装置中。

简单的来说,IGCT 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 属于电流型器件,IGBT属于电压场控型器件,IGCT的工作频率在1k赫兹左右,IGBT可以工作在几十k赫兹频率下;IGCT的电压单管可以达到10kv,电流可以达到8kA,IGBT的电压一般在4500V,1200A左右;IGCT一般应用在10MW以上能量转换装置中,IGBT则工作在5MW以下的装置中。


 

ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 高压柜IGCT模块

5SHY3545L0020-3.jpg


 

英文介绍

 

5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT is an integrated circuit that can control the speed and torque of a motor. It can provide efficient control and can provide higher accuracy and reliability. 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT is a composite device, which consists of an integrated circuit (IC) and a thyristor (IGBT), can provide efficient control, and can provide greater accuracy and reliability.

The main difference between IGCT and IGBT is that IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 can provide higher efficiency and lower loss, while IGBT can provide higher power density and lower noise. In addition, IGCT can provide higher accuracy and reliability, while IGBT can provide lower cost.

IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-loss, etc., and causes low cost, high yield, and has a good application prospect.

IGCT5SHY3545L0020 3BHE014105R0001 5SXE08-0166 is a current pulse drive, the drive power is relatively large, but its gate drive circuit is integrated in the IGCT, only the gate drive power supply interface and the optical fiber used to transmit the trigger signal and feedback state, the drive volume is small and simple. IGCT is a thyristor compound tube, which can be directly connected in series, so it is not necessary to consider the pressure equating measures too much. IGBT in series use should consider the pressure equalization measures. IGCT on-off and turn-off losses are very low, if the drive power is not considered, the IGCT loss of the same voltage class is lower than that of IGBT. For IGCT, 4.5kV/3kA is the most commonly used specification, and its capacity and voltage level are much larger than IGBT, which is more suitable for application in high-power FACTS devices and high-power transmission devices.

In simple terms, IGCT 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 belongs to the current type device, IGBT belongs to the voltage field control device, IGCT operating frequency is about 1k Hertz, IGBT can work at tens of k Hertz frequency; The voltage single tube of IGCT can reach 10kv, the current can reach 8kA, and the voltage of IGBT is generally about 4500V and 1200A. IGCT is generally used in energy conversion devices of more than 10MW, and IGBT works in devices of less than 5MW.


 

ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 高压柜IGCT模块


5SHY3545L0020-3.jpg


 

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